Product Summary

The K4E641611C-TC60 is a 4M x 16bit CMOS Dynamic RAM. It is fabricated using Samsung advanced CMOS process to realize high band-width, low power consumption and high reliability. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung advanced CMOS process to realize high band-width, low power consumption and high reliability.

Parametrics

K4E641611C-TC60 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -1.0 to +7.0 V; (2)Voltage on VCC supply relative to VSS: -1.0 to +7.0 V; (3)Storage Temperature: -55 to +150 °C; (4)Power Dissipation: 1 W; (5)Short Circuit Output Current: 50 mA.

Features

K4E641611C-TC60 features: (1)Extended Data Out Mode operation; (2)2 CAS Byte/Word Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Fast parallel test mode capability; (6)TTL(5.0V) compatible inputs and outputs; (7)Early Write or output enable controlled write; (8)JEDEC Standard pinout; (9)Available in Plastic TSOP(II) package; (10)+5.0V+/-0% power supply.

Diagrams

K4E641611C-TC60 pin connection